SGSIF461 fast-switch hollow-emitter npn transistor n very high switching speed n npn transistor n low base-drive requirements applications: n switch mode power supplies description the SGSIF461 is manufactured using multiepitaxial mesa technology for cost-effective high performance and uses a hollow emitter structure to enhance switching speeds. the sgsf series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in tvs and monitors. internal schematic diagram june 1997 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 850 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 15 a i cm collector peak current (t p < 5 ms) 25 a i b base current 8 a i bm base peak current (t p < 5 ms) 15 a p tot total dissipation at t c = 25 o c55w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 isowatt218 1/4
thermal data isowatt218 r thj-case thermal resistance junction-case max 2.2 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 700 v 200 m a i ceo collector cut-off current (i b = 0) v ec = 380 v v ec = 400 v 200 2 m a ma i ebo emitter cut-off current (i c = 0) v be = 7 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 100 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 10 a i b = 2 a i c = 5.5 a i b = 0.8 a 1.5 1.5 v v v be(sat) * base-emitter saturation voltage i c = 10 a i b = 2 a i c = 5.5 a i b = 0.8 a 1.5 1.5 v v t on t s t f turn-on time storage time fall time resistive load v cc = 250 v i c = 10 a i b1 = 2 a i b2 = -2i b1 1 1.4 0.25 1.7 2.3 0.5 m s m s m s t on t s t f turn-on time storage time fall time resistive load v cc = 250 v i c = 10 a i b1 = 2 a i b2 = -2i b1 with antisaturation network 1 1 0.15 m s m s m s t on t s t f turn-on time storage time fall time resistive load v cc = 250 v i c = 10 a i b1 = 2 a v be (off) = - 5 v 1 1 0.06 m s m s m s t s t f storage time fall time inductive load i c = 10 a h fe = 5 v cl = 350 v v be(off) = -5 v l = 300 m h r be(off) = 1.2 w 1.4 0.1 2.8 0.2 m s m s t s t f storage time fall time inductive load i c = 10 a h fe = 5 v cl = 350 v v be(off) = -5 v l = 300 m h r be(off) = 1.2 w t c = 100 o c 4 0.3 m s m s * pulsed: pulse duration = 300 m s, duty cycle 1.5 % SGSIF461 2/4
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data SGSIF461 3/4
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . SGSIF461 4/4
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